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Nature Electronics volume 6, pages 260–263 (2023)
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While academic research into resistive switching materials continues to grow, Intel recently shut down its resistive switching memory manufacturing plant. What does this mean for the future of nanoelectronic technologies based on resistive switching devices?
The first reproducible and consistent observations of non-volatile resistive switching took place in the early 1960s with arsenic telluride alloys, a family of materials that change their phase — and thus their resistance — when electrical stresses of different polarities are applied1. In the early 2000s, resistive switching devices made with phase-change materials, metal oxides and magnetic materials started to become popular for data storage. Subsequently, commercial standalone memories were created by Panasonic, Adesto, Fujitsu and Intel, although their capabilities were limited to a few megabits2.
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We would like to thank S. Bertolazzi from Yole Development and S. Pazos from the King Abdullah University of Science and Technology for useful discussions, as well as W. Lu from the University of Michigan for providing an early version of Fig. 1b.
Materials Science and Engineering Program, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
Mario Lanza
Weebit Nano Ltd, Hod Hasharon, Israel
Gabriel Molas & Ishai Naveh
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You can also search for this author in PubMed Google Scholar
You can also search for this author in PubMed Google Scholar
Correspondence to Mario Lanza.
G.M. and I.N. are employees of Weebit Nano, which is looking to commercialize resistive switching devices based on metal oxides.
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Lanza, M., Molas, G. & Naveh, I. The gap between academia and industry in resistive switching research. Nat Electron 6, 260–263 (2023). https://doi.org/10.1038/s41928-023-00954-8
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